Six-junction GaAs Laser Photovoltaic Cells at 808 nm
Converting 808 nm light into electricity
A six-junction gallium arsenide (GaAs) laser photovoltaic cell converts incident monochromatic laser light into electrical power. GaAs is gallium arsenide, not gallium nitride (GaN).
What the six junctions do
In a vertically stacked design, tunnel junctions connect the GaAs subcells in series to add their voltages. Layer thicknesses are designed to match the photocurrents at the target wavelength. This is different from splitting sunlight between different-bandgap subcells optimized for different spectral bands.
Wavelength and test conditions
808 nm can be a semiconductor laser emission wavelength and is also used to pump solid-state lasers. Pump wavelength and laser output wavelength are different parameters; select the receiver for the light that actually reaches it.
Efficiency, voltage, and power depend on incident power, illumination pattern, temperature, and load. Results reported for research devices do not establish specifications for a MiracleTech product. Refer to the relevant product data and agreed test conditions.
System integration
Power-over-fiber, isolated sensing, and remote measurement applications also require optical coupling, thermal design, MPPT, and DC-DC conversion. Account for transmission and conversion losses, then verify usable load power at system level.
